| No. | Partie # | Fabricant | Description | Fiche Technique |
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TEMIC |
N-Channel MOSFET arameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS VGS = Ov, In = 2S0!1A 60 Gate Threshold Voltage Gate-Body Leakage VGS(th) Vns = VGS, In = 2S0!1A 2.0 IGSS Vns = Ov, VGS = ±20V Zero Gate Voltage Drain Cu |
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TEMIC |
N-Channel MOSFET C (05/27/94) Advance Information Limit 40 80 1.8 Unit 'c{w 6-155 TEMIC SUP/SUB50N06-18 = Specifications (TJ 25°C Unless Otherwise Noted) Siliconix Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltag |
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TEMIC |
N-Channel Transistor Advance Information Limit 40 80 1.5 Unit 'c/w 6-161 TEMIC SUP/SUB60N06-14 = Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero |
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TEMIC |
P-Channel Transistor ). (05/18/94) Advance Information Limit 40 80 1.0 Unit .c{w 6-163 TEMIC SUP/SUB60P06-20 = Specifications (TJ 25°C Unless Otherwise Noted) Static Parameter Symbol Test Condition Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Bo |
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TEMIC Semiconductors |
P-Channel Enhancement-Mode Transistors ge derating. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289. A SPICE Model data sheet is available for this product (FaxBack document #70543). RthJA RthJC |
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