Silicon SSM fiche technique

No.	Partie #	Fabricant	Description
1	70T03H	Silicon	SSM70T03H
2	40N03P	Silicon Standard	SSM40N03P a Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 62 Unit °C/W °C/W Rev.2.01 7/01/2004 www.SiliconStandard.com 1 of 6 SSM40N03P Electrical Characteristics @ Tj=25oC (unless o
3	SSM60T03GJ	Silicon Standard	N-channel Enhancement-mode Power MOSFET S ID IDM PD EAS TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current 1 http://www.DataSheet4U.net/ Value 30 ±20 45 32 120 44 0.352 3 Units V V A A A W W/°C mJ °C °C Total po
4	70L02H	Silicon Standard	SSM70L02H
5	SSM3K15AMFV	Toshiba Semiconductor	Silicon N-Channel MOSFET tc.) are within the JEITA TOSHIBA ― 2-1L1B absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 1.5 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Meth
6	SSM9977GM	Silicon Standard	Dual N-channel Enhancement-mode Power MOSFET
7	SSM3K7002BFU	Toshiba Semiconductor	Silicon N-Channel MOSFET are within the absolute maximum ratings. Weight: 6.0 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabil
8	SSM70T03GJ	Silicon Standard	N-Channel MOSFET ID IDM PD EAS TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current 1 Value 30 ±20 60 43 195 53 0.36 3 Units V V A A A W W/°C mJ °C °C Total power dissipation, TC = 25°C Lin
9	SSM5H14F	Toshiba Semiconductor	Silicon Epitaxial Schottky Barrier Diode ting −55 to 125 −40 to 100 Unit °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signifi
10	SSM9477GM	Silicon Standard	N-channel Enhancement-mode Power MOSFET
11	SSM7002EGU	Silicon Standard	N-channel Enhancement-mode Power MOSFET
12	SSM75T10GS	Silicon Standard	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
13	SSM70L02	Silicon Standard	N-Channel Enhancement Mode Power MosFET
14	SSM3K02F	Toshiba Semiconductor	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type als. 1 2003-03-27 SSM3K02F Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacit
15	SSM3K15FS	Toshiba Semiconductor	Silicon N-Channel MOSFET in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
16	SSM70L02H	Silicon Standard	N-Channel Enhancement Mode Power MosFET
17	SSM70T03H	Silicon Standard	N-Channel Enhancement Mode Power MOSFET
18	SSM9575M	Silicon Standard	P-Channel MOSFET °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit °C/W 12/02/2004 Rev.2.01 www.Si
19	SSM95T07GP	Silicon Standard	N-Channel MOSFET perating Junction Temperature Range 450 -55 to 175 -55 to 175 THERMAL DATA Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.5 62 Units ℃/W ℃/W 07/11/2007 Rev.1.00 www.SiliconSta
20	SSM3J36FS	Toshiba Semiconductor	Silicon P-Channel MOSFET reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR