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40N03P |
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| Part Number | 40N03P |
| Manufacturer | Silicon Standard |
| Description | Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely p... |
| Features |
a
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 62 Unit °C/W °C/W
Rev.2.01 7/01/2004
www.SiliconStandard.com
1 of 6
SSM40N03P
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.037
Max. Units 17 23 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
∆ BV DSS/∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance
VGS=10V,... |
| Document |
 40N03P Data Sheet
PDF 148.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 40N03 |
SeCoS |
N-Channel Enhancement Mode PowerMos FET |
|
| 2 | 40N03GP |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET |
|
| 3 | 40N05 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 40N06 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 40N06 |
Din-Tek |
DTU40N06 |
|