SSM70T03GJ |
Part Number | SSM70T03GJ |
Manufacturer | Silicon Standard |
Description | The SSM70T03 acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching c... |
Features |
ID IDM PD EAS TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current
1
Value 30 ±20 60 43 195 53 0.36
3
Units V V A A A W W/°C mJ °C °C
Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy Storage temperature range Operating junction temperature range
29 -55 to 175 -55 to 175
THERMAL CHARACTERISTICS
Symbol
RΘ JC RΘ JA
Parameter
Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient
Value
2.8 110
Units
°C/W °C/W
Notes:
1.Pulse width must be limited... |
Document |
SSM70T03GJ Data Sheet
PDF 596.01KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSM70T03GH |
Silicon Standard |
N-Channel MOSFET | |
2 | SSM70T03H |
Silicon Standard |
N-Channel Enhancement Mode Power MOSFET | |
3 | SSM70T03J |
Silicon Standard |
N-Channel Enhancement Mode Power MOSFET | |
4 | SSM7002DGU |
Silicon Standard |
Dual N-channel Enhancement-mode Power MOSFET | |
5 | SSM7002EGU |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET |