| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
IGBT chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 3.1 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage |
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Siemens Semiconductor Group |
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection) • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping |
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Siemens Semiconductor Group |
IGBT ≤1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.3 mA Col |
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Siemens Semiconductor Group |
IGBT ≤ 0.63 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.7 mA C |
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Siemens Semiconductor Group |
IGBT JC ≤ 0.63 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 m |
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Siemens Semiconductor Group |
IGBT - RthJC ≤ 0.4 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC |
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Siemens Semiconductor Group |
IGBT 150 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 2 8 6.5 3 3.7 V VGE = VCE, IC = 6 mA Collector- |
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Siemens Semiconductor Group |
IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 57 03.96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteris |
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Siemens Semiconductor Group |
MOSFET q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 131 VDS 50 V ID 25 A RDS(on) 0.06 Ω Package TO-220AB Order |
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Siemens Semiconductor Group |
Smart Highside Power Switch • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open dra |
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Siemens Semiconductor Group |
IGBT 0.63 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 mA Col |
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Siemens Semiconductor Group |
IGBT 50 / 56 Unit - RthJC ≤ 0.42 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CES 1200 5.5 5.5 4.6 8 6.6 6.5 7.6 |
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Siemens Semiconductor Group |
IGBT 0.4 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 3.8 - V VGE = VCE, IC = 0.7 mA Coll |
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Siemens Semiconductor Group |
IGBT Vis - Semiconductor Group 1 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 3.1 2.5 |
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Siemens Semiconductor Group |
IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 31 03.96 BSM 121 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Dr |
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Siemens Semiconductor Group |
IGBT eristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.3 1.2 6.5 3 3.7 V VGE = VCE, IC = 0.6 mA Collector-emitter saturation voltage |
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Siemens Semiconductor Group |
IGBT otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7 2.8 V VGE = VCE, IC = 0.4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj |
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Siemens Semiconductor Group |
IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 57 03.96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteris |
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Siemens Semiconductor Group |
IGBT to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 78 03.96 BSM 191 F Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source break |
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Siemens Semiconductor Group |
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current) |
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