BUP213 Siemens Semiconductor Group IGBT Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

BUP213

Siemens Semiconductor Group
BUP213
BUP213 BUP213
zoom Click to view a larger image
Part Number BUP213
Manufacturer Siemens Semiconductor Group
Description BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 213 Maximum Ratings Parameter Collector-emitter v...
Features JC ≤ 0.63 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C Zero gate voltage collector current ICES 0.8 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Chara...

Document Datasheet BUP213 Data Sheet
PDF 110.33KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 BUP212
Infineon Technologies AG
IGBT Datasheet
2 BUP200
Siemens Semiconductor Group
IGBT Datasheet
3 BUP200D
Siemens Semiconductor Group
IGBT Datasheet
4 BUP202
Siemens Semiconductor Group
IGBT Datasheet
5 BUP203
Siemens Semiconductor Group
IGBT Datasheet
More datasheet from Siemens Semiconductor Group



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact