| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
2SC3675 · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process). JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semicon Device |
2SC3688 · Fast speed (t f=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-t |
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Sanyo Semicon Device |
8K x 8 SRAM |
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Sanyo Semicon Device |
2SC3636 · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
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Sanyo Semicon Device |
2SC3642 · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3642] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 |
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Sanyo Semicon Device |
NPN Transistor · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Very small size making it easy to provide high- density, small-sized hybrid IC’s. |
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Sanyo Semicon Device |
64K SRAM |
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Sanyo Semicon Device |
2SC3686 |
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Sanyo Semicon Device |
64K SRAM |
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Sanyo Semicon Device |
8K x 8 SRAM |
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Sanyo Semicon Device |
8K x 8 SRAM |
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Sanyo Semicon Device |
8K x 8 SRAM |
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Sanyo Semicon Device |
8K x 8 SRAM |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3642] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3643] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High reliability (Adoption of HVP process). · High speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3644] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistor • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta |
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Sanyo Semicon Device |
NPN Transistor · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process). JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter |
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