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2SC3675 |
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| Part Number | 2SC3675 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications · High voltage amplifiers. · High-vol... |
| Features |
· High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process). JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 1 : Base 2 : Collector 3 : Emitter Conditions Ratings 1500 900 5 100 300 10 150 –55 to +150 Unit V V V mA mA W ˚... |
| Document |
 2SC3675 Data Sheet
PDF 97.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3670 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3671 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3672 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3673 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3675 |
INCHANGE |
NPN Transistor |
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