2SC3636 Sanyo Semicon Device NPN Triple Diffused Planar Silicon Transistor Datasheet, en stock, prix

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2SC3636

Sanyo Semicon Device
2SC3636
2SC3636 2SC3636
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Part Number 2SC3636
Manufacturer Sanyo Semicon Device
Description Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP ...
Features
· High reliability (Adoption of HVP process).
· Fast speed.
· High breakdown voltage.
· Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff...

Document Datasheet 2SC3636 Data Sheet
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