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2SC3647 |
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| Part Number | 2SC3647 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of ... |
| Features |
• Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings (--)120 (--)100 (--)6 (--)2 (-... |
| Document |
 2SC3647 Data Sheet
PDF 260.18KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3640 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SC3642 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC3642 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3643 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC3644 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|