Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SC3651 |
Click to view a larger image
| Part Number | 2SC3651 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF amplifiers, various drivers, muting circuit. ... |
| Features |
· High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SC3651] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature * Mounted on ceramic board (250mm2×0.8mm) Symbol VCBO... |
| Document |
 2SC3651 Data Sheet
PDF 88.94KB |
| Distributor | Stock | Price | Buy |
|---|
