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STMicroelectronics |
STP16NE06 Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STD16NF25 STF16NF25 STP16NF25 VDS 250 V RDS(on) max 0.235 Ω ID PTOT 14 A 100 W 14 A(1) 25 W 14 A 100 W 1. Limited by maximum junction temperature • Exceptional dv/dt capability • 100% avalanche tested • Application oriented characte |
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STMicroelectronics |
Ultra low power 16-Mbit serial SPI page EEPROM Interface • Supports serial peripheral interface (SPI) and dual/quad outputs • Wide voltage range: VCC from 1.6 to 3.6 V • Temperature range: – -40 °C to +85 °C (industrial) – -40 °C to +105 °C (extended) • Fast read: – 50 MHz read single output – 80 |
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STMicroelectronics |
STP16NE06FP Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable |
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STMicroelectronics |
LNBP supply and control voltage regulator summary ■ Complete interface for two LNBs remote supply and control ■ LNB selection and stand-by function ■ Built-in tone oscillator factory trimmed at 22KHz ■ Fast oscillator start-up facilitates DiSEqCTM encoding ■ Two supply inputs for lowest diss |
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STMicroelectronics |
16-Mbit Low Voltage Serial Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 16Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (512 Kbit) Bulk Erase (16Mbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate (maximum) Deep |
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STMicroelectronics |
STP16NF06FP Type STP16NF06 STP16NF06FP VDSS 60V 60V RDS(on) <0.1Ω <0.1Ω ID 16A 11A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectroni |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max ID PTOT STP160N4LF6 40 V 0.0029 Ω 120 A 150 W • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • Logic level drive • High avalanche ruggedness • 100% avalanche tested Figure 1. Internal schematic dia |
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STMicroelectronics |
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY e output which deliver a current proportional to the selected output current. SenseEnable pin allows to connect any number of VNQ05XSP16 on the same Current Sense line. Active current limitation combined with thermal shut-down and automatic restart p |
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STMicroelectronics |
STP16NS25 oltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Volt |
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STMicroelectronics |
Low voltage 16-bit constant current LED sink driver ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low voltage power supply down to 3 V 16 constant current output channels Adjustable output current through external resistor Short and open output error detection Serial data IN/parallel data OUT 3.3 V MCU-driving capability Outp |
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STMicroelectronics |
N-channel Power MOSFET Type STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5 VDSS @ TJmax RDS(on) max 710 V < 0.279 Ω ■ Worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested |
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STMicroelectronics |
N-channel MOSFET Order code VDS RDS(on) max. ID PTOT STP160N3LL 30 V 3.2 mΩ 120 A 136 W • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N- |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω ID 1 3 3 12 STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N 15 A 15 A 15 A (1) D²PAK 2 1 3 I²PAK 15 A 15 A 3 1 2 TO |
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STMicroelectronics |
Low voltage 16-bit constant current LED sink driver ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low voltage power supply down to 3 V 16 constant current output channels Adjustable output current through external resistor Short and open output error detection Serial Data IN/Parallel data OUT 3.3 V micro driver-able Output cu |
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STMicroelectronics |
Low voltage 16-bit constant current LED sink driver the open and short Features LED detections on the outputs.The STAP16DPS05 ensures the backward • AECQ100 qualification compatibility with the STP16C/L596. The • Low voltage power supply down to 3 V • 16 constant current output channels • Adjusta |
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STMicroelectronics |
Low voltage 16-bit constant current LED sink driver AECQ100 qualified Low voltage power supply down to 3 V 16 constant current output channels Adjustable output current through external resistor Short and open output error detection Serial data IN/parallel data OUT 3.3 V micro driver-abl |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STP165N10F4 VDSS 100 V RDS(on) max ID < 5.5 mΩ 120 A ■ N-channel enhancement mode ■ 100% avalanche rated ■ Low gate charge ■ Very low on-resistance Application Switching applications Description The STP165N10F4 is an N-channel enha |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STD16N50M2 STF16N50M2 STP16N50M2 VDS at TJ max. RDS(on) max. 550 V 0.28 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected ID 13 A Packages DPAK TO-220FP TO-220 Ap |
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STMicroelectronics |
N-channel Power MOSFET Order code STP16N60M2 STU16N60M2 VDS 600 V RDS(on) max. 0.32 Ω ID 12 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These dev |
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