STP160N3LL |
Part Number | STP160N3LL |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code... |
Features |
Order code VDS RDS(on) max.
ID
PTOT
STP160N3LL 30 V 3.2 mΩ 120 A 136 W
• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP160N3LL Table 1: Device summary Marking Package 160N3LL TO-220 Packing Tube June 2015 DocID025073 Rev 3 This is information on a product in full production. ... |
Document |
STP160N3LL Data Sheet
PDF 289.84KB |
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