P16NS25 |
Part Number | P16NS25 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the C... |
Features |
oltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 (1) ISD≤ 16A, di/dt≤300 A/ µs, VDD≤ V(BR)DSS , Tj≤TjMAX (*) Limited only by maximum temperature allowed Value STP16NS25FP 250 250 ± 20 16 11 64 140 1 5 2500 16(*) 11(*) 64(*) 40 0.33 Unit V V V A A A W W/°C V/ns V °C ( •)Pulse width limited by safe operating area May 200... |
Document |
P16NS25 Data Sheet
PDF 259.11KB |
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