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P16NE06FP |
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| Part Number | P16NE06FP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely... |
| Features |
V/dt T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 16 10 64 60 0.4 6 -65 to 175 175
(1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Value STP16NE06 STP16NE06FP 60 60 ± 20 11 7 64 30 0.2 2000
Unit V V V A A A W
o W/ C
V V/ns
o o
C C
( •... |
| Document |
 P16NE06FP Data Sheet
PDF 266.97KB |
| Distributor | Stock | Price | Buy |
|---|
