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STP160N4LF6 |
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| Part Number | STP160N4LF6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all... |
| Features |
Order code VDS RDS(on) max ID PTOT STP160N4LF6 40 V 0.0029 Ω 120 A 150 W
• RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • Logic level drive • High avalanche ruggedness • 100% avalanche tested Figure 1. Internal schematic diagram ' Ć7$% * Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STP160N4LF6 Table 1. Device summary M... |
| Document |
 STP160N4LF6 Data Sheet
PDF 791.47KB |
| Distributor | Stock | Price | Buy |
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