| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
STP16NE06 Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STD16NF25 STF16NF25 STP16NF25 VDS 250 V RDS(on) max 0.235 Ω ID PTOT 14 A 100 W 14 A(1) 25 W 14 A 100 W 1. Limited by maximum junction temperature • Exceptional dv/dt capability • 100% avalanche tested • Application oriented characte |
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STMicroelectronics |
N-channel Power MOSFET ( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 |
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STMicroelectronics |
N-channel Power MOSFET 1234 PowerFLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code VDS @ TJmax RDS(on) max ID STL16N65M2 710 V 0.395 Ω 7.5 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% aval |
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STMicroelectronics |
SCR IT(RMS) = 25A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated (Plastic) |
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STMicroelectronics |
STP16NE06FP Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable |
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STMicroelectronics |
STW16NB60 ate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature |
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STMicroelectronics |
STU16NB50 j Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Fa |
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STMicroelectronics |
N-channel Power MOSFET Order code VDSS RDS(on) max ID STL16N1VH5 12 V 0.003 Ω 16 A (1) t(s)1. The value is rated according Rthj-pcb c ■ Improved die-to-footprint ratio u ■ Very low profile package (1mm max) rod ■ Very low thermal resistance P ■ Very low gate charge te |
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STMicroelectronics |
N-Channel MOSFET Type STB16NF06L VDSS 60V RDS(on) ID <0.09Ω 16A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Logic level device ■ Low threshold drive Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Fe |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω ID 1 3 3 12 STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N 15 A 15 A 15 A (1) D²PAK 2 1 3 I²PAK 15 A 15 A 3 1 2 TO |
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STMicroelectronics |
N-channel Power MOSFET = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 16 10 64 160 1.28 3 –65 to 150 150 (1)ISD ≤16A, di/dt ≤100A/µs, |
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STMicroelectronics |
STP16NF06FP Type STP16NF06 STP16NF06FP VDSS 60V 60V RDS(on) <0.1Ω <0.1Ω ID 16A 11A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectroni |
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STMicroelectronics |
N-channel Power MOSFET Order code STL16N60M2 VDS @ TJmax 650 V RDS(on) max. 0.355 Ω ID 8A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device i |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS STD16NF25 STF16NF25 250 V • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge RDS(on) max. 0.235 Ω ID 14 A Package DPAK TO-220FP Applications • Switching applications AM01475v1_noZen Description These Po |
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STMicroelectronics |
N-channel Power MOSFET Order code STL16N60M6 VDS 600 V RDS(on) max. 0.35 Ω ID 8A 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View Reduced switching losses Lower RDS(on) x area vs previous gene |
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STMicroelectronics |
N-channel Power MOSFET Type STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5 VDSS @ TJmax RDS(on) max 710 V < 0.279 Ω ■ Worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested |
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STMicroelectronics |
N-channel Power MOSFET Type STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5 VDSS @ TJmax RDS(on) max 710 V < 0.279 Ω ■ Worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested |
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STMicroelectronics |
Snubberless Triac |
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STMicroelectronics |
STP16NS25 oltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Volt |
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