W16NB60 |
Part Number | W16NB60 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
Features |
ate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 16 10 64 220 1.76 4 –65 to 150 150 (1)ISD ≤16A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C ( •)Pulse width limited by safe operating area April 2003 1/8 STW16NB60 www.DataSheet4U.com THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Ma... |
Document |
W16NB60 Data Sheet
PDF 205.96KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | W16NA40 |
ST Microelectronics |
STW16NA40 | |
2 | W160A |
National Semiconductor |
160 Lead Cerquad | |
3 | W161 |
Cypress Semiconductor |
133-MHz Spread Spectrum FTG | |
4 | W162 |
Cypress Semiconductor |
Spread Aware/ Zero Delay Buffer | |
5 | W163 |
Cypress Semiconductor |
Spread Aware/ Zero Delay Buffer |