U16NB50 STMicroelectronics STU16NB50 Datasheet, en stock, prix

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U16NB50

STMicroelectronics
U16NB50
U16NB50 U16NB50
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Part Number U16NB50
Manufacturer STMicroelectronics (https://www.st.com/)
Description Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Co...
Features j Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 500 500 ± 30 15.6 9.8 62 160 1.28 4.5 -65 to 150 150 ( 1) ISD ≤ 16A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C 1/6 (
•) Pulse width limited by safe operating area December 1998 This is preliminary ...

Document Datasheet U16NB50 Data Sheet
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