U16NB50 |
Part Number | U16NB50 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Co... |
Features |
j Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 500 500 ± 30 15.6 9.8 62 160 1.28 4.5 -65 to 150 150
( 1) ISD ≤ 16A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/6
( •) Pulse width limited by safe operating area December 1998 This is preliminary ... |
Document |
U16NB50 Data Sheet
PDF 50.21KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | U1600 |
Agilent |
Handheld Digital Oscilloscopes | |
2 | U1600A |
Agilent |
Handheld Digital Oscilloscopes | |
3 | U1602 |
ECS |
(U1602 / U1603) Energy Control System | |
4 | U1603 |
ECS |
(U1602 / U1603) Energy Control System | |
5 | U1620G |
Thinki Semiconductor |
16 Ampere Surface Mount Common Cathode Ultra Fast Recovery Rectifier |