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ST Microelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
STP6NC60 te Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand |
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ST Microelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP6NB50FP Tj March 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o |
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STMicroelectronics |
STP6NK60ZFP Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z VDSS 600 V 600 V 600 V 600 V RDS(on) ID PW < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 30 W < 1.2 Ω 6 A 110 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimi |
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STMicroelectronics |
STP6NK90ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
N-CHANNEL MOSFET Type STP6NK90Z STP6NK90ZFP STB6NK90Z STW7NK90Z VDSS 900 V 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A 5.8 A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ |
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ST Microelectronics |
STP6N60FI ue 600 600 ± 20 3.8 2.4 24 40 0.32 2000 -65 to 150 150 Unit V V V A A A W W/o C V o o C C ( •) Pulse width limited by safe operating area May 1993 1/9 www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com STP6N60FI THERMAL DATA R thj-cas |
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ST Microelectronics |
N-CHANNEL MOSFET TYPE STP6NK70Z STF6NK70Z s s s s s s s Figure 1: Package ID 5A 5 A (*) Pw 110 W 30 W VDSS 700 V 700 V RDS(on) < 1.8 Ω < 1.8 Ω TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZ |
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ST Microelectronics |
N-Channel MOSFET UPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1) V ISO Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) G ate-source Voltage Drain Current (continuous) at Tc |
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STMicroelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
N-CHANNEL Power MOSFET kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulat |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR oltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 o C o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) St orage Temp |
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ST Microelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
N-CHANNEL MOSFET Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z VDSS 600 V 600 V 600 V 600 V RDS(on) ID PW < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 30 W < 1.2 Ω 6 A 110 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimi |
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ST Microelectronics |
N-CHANNEL MOSFET Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z VDSS 600 V 600 V 600 V 600 V RDS(on) ID PW < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 30 W < 1.2 Ω 6 A 110 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimi |
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ST Microelectronics |
STP6NA60FI P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C De |
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ST Microelectronics |
N-CHANNEL MOSFET ymbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Jun 2000 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain |
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ST Microelectronics |
N-CHANNEL MOSFET ymbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Jun 2000 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain |
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