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STP6NC80Z |
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| Part Number | STP6NC80Z |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arra... |
| Features |
OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
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STP6NC80Z/FP/STP6NC80Z-1
Safe Operating Area For TO-220 /D²PAK/I²PAK Safe Operating Area For TO-220FP
www.Da... |
| Document |
 STP6NC80Z Data Sheet
PDF 442.23KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP6NC80Z |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 2 | STP6NC80ZFP |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 3 | STP6NC60 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 4 | STP6NC60FP |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 5 | STP6NC90Z |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|