STP6NB25FP |
Part Number | STP6NB25FP |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCH... |
Features |
ymbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Jun 2000 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –60 to 150 150 (1)ISD ≤ 6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. DataShee Value STP6NB25 250 250 ±30 6 3.8 24 75 0.6 5.5 2000 3.7 2.3 24 30 0.24 STP6NB2... |
Document |
STP6NB25FP Data Sheet
PDF 302.89KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP6NB25 |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STP6NB50 |
ST Microelectronics |
N-Channel MOSFET | |
3 | STP6NB50FP |
ST Microelectronics |
N-Channel MOSFET | |
4 | STP6NB80 |
ST Microelectronics |
N-Channel MOSFET | |
5 | STP6NB80FP |
ST Microelectronics |
N-Channel MOSFET |