P6NC60 |
Part Number | P6NC60 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge ... |
Features |
te Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 150 (1)ISD ≤6A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Value STP(B)6NC60(-1) STP6NC60FP 600 600 ±30 6 3.8 24 125 1.0 3 2500 6(*) 3.8(*) 24(*) 40 0.32 Unit V V V A A A W W/°C V/ns V °C °C ( •)Pulse width limited by safe operating area (*) Limited only by maximum ... |
Document |
P6NC60 Data Sheet
PDF 276.33KB |
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