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P6NB50FP |
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| Part Number | P6NB50FP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Co... |
| Features |
Tj March 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage T emperature Max. O perating Junction Temperature
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value STP6NB50 STP6NB50FP 500 500 ± 30 5.8 3.7 23.2 100 0.8 4.5 --65 to 150 150
(1) ISD ≤ 6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t V V V 3.4 ... |
| Document |
 P6NB50FP Data Sheet
PDF 146.51KB |
| Distributor | Stock | Price | Buy |
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