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ST Microelectronics |
STP4NK60ZFP TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP • 100% avalanche tested • Very low intrinsic capacitances • Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1) Applic |
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STMicroelectronics |
STP4NK60Z TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP • 100% avalanche tested • Very low intrinsic capacitances • Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1) Applic |
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STMicroelectronics |
STP4NK80Z www.DataSheet4U.com Type VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A 3 1 1 3 2 3 1 2 STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 ■ ■ ■ ■ ■ TO-220 TO-220FP Extremely high dv/dt capability 100% a |
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ST Microelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP4NB80FP DS V DGR V GS ID ID IDM ( • ) P tot dv/dt(1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drai |
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ST Microelectronics |
N-Channle MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP4NK80ZFP www.DataSheet4U.com Type VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A 3 1 1 3 2 3 1 2 STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 ■ ■ ■ ■ ■ TO-220 TO-220FP Extremely high dv/dt capability 100% a |
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STMicroelectronics |
STP4NB80 DS V DGR V GS ID ID IDM ( • ) P tot dv/dt(1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drai |
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ST Microelectronics |
STP4NA80 N-Channel MOS Transistor DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) To |
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STMicroelectronics |
STP4NA60FI Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insu |
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ST Microelectronics |
STP4NC60 eter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode |
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STMicroelectronics |
N-CHANNEL MOSFET kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt(1) Peak Diode Recovery voltage slope |
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ST Microelectronics |
N-CHANNEL MOSFET Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operat |
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ST Microelectronics |
STP4NB10 DM ( • ) P tot dv/dt( 1) V ISO Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T ota |
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ST Microelectronics |
N-CHANNEL MOSFET bol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt VISO Tstg Tj Parameter STP4NB50 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Curr |
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ST Microelectronics |
N-CHANNEL MOSFET n-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withst |
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ST Microelectronics |
N-CHANNEL MOSFET 1) V ISO Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = |
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ST Microelectronics |
N-CHANNEL MOSFET IDM ( • ) P tot dv/dt(1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) T |
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ST Microelectronics |
STP4NA80FI ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) 800 800 ± 30 4 2.5 |
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ST Microelectronics |
STP4NC60FP eter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode |
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