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STP4NB50 |
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| Part Number | STP4NB50 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
bol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt VISO Tstg Tj Parameter STP4NB50 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 150 (1)ISD ≤4 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Value STP4NB50FP 500 500 ±30 3.8 2.4 15.2 80 0.64 4.5 2500 2.5 1.6 15.2 35 0.28 Unit V V V A ... |
| Document |
 STP4NB50 Data Sheet
PDF 163.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STP4NB50FP |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 2 | STP4NB100 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 3 | STP4NB100FP |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 4 | STP4NB30 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 5 | STP4NB30FP |
ST Microelectronics |
N-CHANNEL MOSFET |
|