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STP4NB80 |
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| Part Number | STP4NB80 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
IDM ( • ) P tot dv/dt(1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value STP4NB80 STP4NB80FP 800 800 ± 30 4 2.4 16 100 0.8 4.5 -65 to 150 150 (1) ISD ≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ C V/ns o o o 4... |
| Document |
 STP4NB80 Data Sheet
PDF 354.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STP4NB80FP |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 2 | STP4NB100 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 3 | STP4NB100FP |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 4 | STP4NB30 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 5 | STP4NB30FP |
ST Microelectronics |
N-CHANNEL MOSFET |
|