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P4NC60AFP |
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| Part Number | P4NC60AFP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg... |
| Features |
kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
( •)Pulse width limited by safe operating area (1)ISD ≤4.2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. July 2001 Value STP(B)4NC60A(-1) STP4NC60AFP 600 600 ±30 4.2 4.2(*) 2.6 2.6(*) 16.8 16.8(*) 100 35 0.8 0.28 3.5 3.5 -... |
| Document |
 P4NC60AFP Data Sheet
PDF 336.36KB |
| Distributor | Stock | Price | Buy |
|---|
