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P4NC60FP |
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| Part Number | P4NC60FP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge ... |
| Features |
eter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4.2 2.6 16.8 100 0.8 3.5 –65 to 150 (*)Limited only by maximum Temperature allowed Value STP(B)4NC60(-1) 600 600 ±30 4.2(*) 2.6(*) 16.8(*) 35 0.28 3.5 2500 STP4NC60FP Unit V V V A A A W W/°C V/ns V °C ( •)Pulse width limited by safe op... |
| Document |
 P4NC60FP Data Sheet
PDF 276.30KB |
| Distributor | Stock | Price | Buy |
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