| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 3 2 1 2 1 10A 10A 10A (1) 10A TO-220 IPAK 3 1. Limited only by maximum temperature allowed ■ ■ ■ 1 3 100% avalanch |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. STF11N65M2 650 V 0.68 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected ID 7A PTOT 25 W D(2) G(1) S(3) Applications • Switching applications |
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STMicroelectronics |
N-CHANNEL Power MOSFET www.DataSheet4U.com Type VDSS 800 V 800 V 800 V RDS(on) < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω RDS(on)*Qg 14Ω*nC 14Ω*nC 14Ω*nC 14Ω*nC ID 11 A 11 A 11 A 11 A 3 1 STB11NM80 STF11NM80 STP11NM80 TO-247 D²PAK STW11NM80 800 V ■ ■ ■ Low input capacit |
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ST Microelectronics |
N-channel MOSFET Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 3 2 1 2 1 10A 10A 10A (1) 10A TO-220 IPAK 3 1. Limited only by maximum temperature allowed ■ ■ ■ 1 3 100% avalanch |
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ST Microelectronics |
N-CHANNEL Power MOSFET Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Swi |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS at TJ max. RDS(on) max. ID STF11NM60ND 650 V 450 mΩ 10 A • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications • Swit |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STF11N65M2(045Y) 650 V 0.68 Ω 7A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected PTOT 25 W D(2) G(1) S(3) Applications • Switching applicat |
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STMicroelectronics |
N-channel Power MOSFET Order codes STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5 VDSS @ RDS(on) TJmax max ID 710 V < 0.48 Ω 9 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche |
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STMicroelectronics |
N-channel Power MOSFET 23 1 TO-220FP D(2) Order code VDS RDS(on) max. STF11N60M2-EP 600 V 0.595 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected ID 7.5 A App |
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STMicroelectronics |
600W TVS • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STF11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID PTOT 10 A 25 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-pr |
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STMicroelectronics |
N-channel Power MOSFET Order codes STD11NM50N STF11NM50N STP11NM50N ■ ■ ■ VDSS @TJmax RDS(on) max < 0.47 Ω ID 1 3 3 550 V 8.5 A DPAK 1 2 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP 3 1 2 Application Swi |
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ST Microelectronics |
STF11NM80 Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Swi |
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STMicroelectronics |
N-channel MOSFET 123 TO-220FP TO-2201 23 Order codes STF11NM65N VDS RDS(on) max. ID t(s) 123 I2PAKFP uc (TO-281) STFI11NM65N 650 V 455 mΩ 11 A STP11NM65N • 100% avalanche tested d D(2, TAB) • Low input capacitance and gate charge ro • Low gate input r |
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STMicroelectronics |
N-CHANNEL POWER MOSFET TAB 3 2 1 TO-220FP 3 2 1 TO-220 Order codes VDS RDS(on) max ID PTOT STF110N10F7 100 V 0.007 Ω STP110N10F7 45 A 30 W 110 A 150 W • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Figure 1. Internal schema |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS @ TJmax RDS(on)max. STD11N50M2 STF11N50M2 550 V 0.53 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected ID 8A Package DPAK TO-220FP Applications • Switching a |
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STMicroelectronics |
400W TVS • Peak pulse power: 400 W (10/1000 μs) and 2.5 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up t |
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STMicroelectronics |
600W TVS • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power |
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ST Microelectronics |
EMI FILTER INCLUDING ESD PROTECTION 2 GND 01 02 03 04 GND I3 I4 I5 I6 GND I7 I8 I9 I10 I11 I12 GND 07 08 09 010 011 012 COMPLIES WITH THE FOLLOWING STANDARDS: IEC61000-4-2 Level 4 on input pins 15kV 8 kV (air discharge) (contact discharge) 05 06 GND MIL STD 883E - Method 3015-7 Clas |
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