STF11NM60ND |
Part Number | STF11NM60ND |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior ... |
Features |
Order code
VDS at TJ max.
RDS(on) max.
ID
STF11NM60ND
650 V
450 mΩ
10 A
• Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications Description This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Product status link STF11NM6... |
Document |
STF11NM60ND Data Sheet
PDF 614.73KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | STF11NM60N |
ST Microelectronics |
N-channel MOSFET | |
2 | STF11NM60N |
INCHANGE |
N-Channel MOSFET | |
3 | STF11NM60ND |
INCHANGE |
N-Channel MOSFET | |
4 | STF11NM65N |
STMicroelectronics |
N-channel MOSFET | |
5 | STF11NM50N |
STMicroelectronics |
N-channel Power MOSFET |