STF110N10F7 |
Part Number | STF110N10F7 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. *... |
Features |
TAB
3 2 1
TO-220FP
3 2 1
TO-220
Order codes VDS RDS(on) max ID PTOT
STF110N10F7 100 V 0.007 Ω
STP110N10F7
45 A 30 W 110 A 150 W
• Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Figure 1. Internal schematic diagram '7$% Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6 $0Y Order codes STF110N10F7 STP110N10F7 Table 1. Device summary Marking Package 110N10F7 TO-... |
Document |
STF110N10F7 Data Sheet
PDF 1.17MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STF110N10F7 |
INCHANGE |
N-Channel MOSFET | |
2 | STF11N50M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
3 | STF11N60DM2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STF11N60M2-EP |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STF11N65M2 |
STMicroelectronics |
N-channel Power MOSFET |