F11NM60N |
Part Number | F11NM60N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of t... |
Features |
Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID
3
3 2
1 2
1
10A 10A 10A (1) 10A
TO-220
IPAK
3
1. Limited only by maximum temperature allowed ■ ■ ■ 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel DPAK 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate ... |
Document |
F11NM60N Data Sheet
PDF 769.93KB |
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