| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Low inductance packaging sho |
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Hynix Semiconductor |
32-bit ARM7TDMI RISC static CMOS CPU core 32-bit ARM7TDMI RISC static CMOS CPU core : Running up to 70 MHz 8Kbytes combined instruction/data cache Memory management unit Supports Little Endian operating system 2Kbytes SRAM for internal buffer memory On-chip peripherals with indiv |
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Fairchild Semiconductor |
MOSFET General Description Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A Low ind |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Low inductance packaging shorte |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A Low inductance packaging s |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A Low inductance packaging shor |
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Fairchild Semiconductor |
Triple Video D/A Converters • • • • • • • • • • 10-bit resolution 150 megapixels per second ± 0.1% linearity error Sync and blank controls 1.0V p-p video into 37.5Ω or 75Ω load Internal bandgap voltage reference Double-buffered data for low distortion TTL-compatible inputs Low |
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Fairchild Semiconductor |
Asymmetric Dual N-Channel MOSFET Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A Low inductance packaging shor |
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Hynix Semiconductor |
4-BIT SINGLE CHIP MICROCOMPUTERS of GMS340 Series so that you can utilize this product to its fullest capacity. A detailed explanations of the specifications and applications regarding the hardware is hereby provided. The contents of this user`s manual are subject to change for the |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A Low inductance packaging |
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Fairchild Semiconductor |
Triple Video D/A Converters • 8-bit resolution • 150 megapixels per second – 0.2% linearity error • Sync and blank controls • 1.0V p-p video into 37.5Ω or 75Ω load • Internal bandgap voltage reference • Double-buffered data for low distortion • TTL-compatible inputs • Low glitc |
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Fairchild Semiconductor |
Triple Video D/A Converters • 8-bit resolution • 150 megapixels per second – 0.2% linearity error • Sync and blank controls • 1.0V p-p video into 37.5Ω or 75Ω load • Internal bandgap voltage reference • Double-buffered data for low distortion • TTL-compatible inputs • Low glitc |
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Fairchild Semiconductor |
Triple Video D/A Converter • • • • • ±2.5% gain matching ±0.5 LSB linearity error Internal bandgap voltage reference Low glitch energy Single 3.3 Volt power supply Description The FMS3818 is a low-cost triple D/A converter, tailored to fit graphics and video applications where |
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Fairchild Semiconductor |
Asymmetric Dual N-Channel MOSFET Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A Low inductance packaging shor |
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ON Semiconductor |
P-Channel Power MOSFET • ON-resistance RDS(on)1=5.0mΩ (typ.) • Input capacitance Ciss=13200pF (typ.) • -4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) |
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ON Semiconductor |
Asymmetric Dual N-Channel MOSFET Q1: N−Channel • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel • Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A • Low Inductance Packaging Shor |
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ON Semiconductor |
N-Channel MOSFET • Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A • Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A • Typ Qg = 31 nC at VGS = 10 V • Low Miller Charge • Optimized Efficiency at High Frequencies • This Device is Pb−Free, Halide Free and RoHS Compliant Appl |
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ON Semiconductor |
Dual N-Channel MOSFET Q1: N−Channel • Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel • Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A • Max RDS(on) = 3.2 mW at VGS = 4.5 V, ID = 22 A • Low Inductance Packaging Shor |
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ON Semiconductor |
N-Channel MOSFET • Max RDS(on) = 16.5 mW at VGS = 10 V, ID = 8.8 A • Max RDS(on) = 24 mW at VGS = 6 V, ID = 8.4 A • Typ Qg = 28 nC at VGS = 10 V • Low Miller Charge • Optimized Efficiency at High Frequencies • Pb−Free, Halide Free and RoHS Compliant Applications • DC |
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Fairchild Semiconductor |
MOSFET General Description Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 23 A Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A Low ind |
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