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FDMS3660S |
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| Part Number | FDMS3660S |
| Manufacturer | Fairchild Semiconductor |
| Description | This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The co... |
| Features |
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
February 2015
General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable ... |
| Document |
 FDMS3660S Data Sheet
PDF 577.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMS3660AS |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMS3660S |
ON Semiconductor |
Asymmetric Dual N-Channel MOSFET |
|
| 3 | FDMS3662 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDMS3662 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMS3664S |
Fairchild Semiconductor |
MOSFET |
|