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FDMS3664S |
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| Part Number | FDMS3664S |
| Manufacturer | Fairchild Semiconductor |
| Description | Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS... |
| Features |
General Description
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placeme... |
| Document |
 FDMS3664S Data Sheet
PDF 547.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMS3664S |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 2 | FDMS3660AS |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDMS3660S |
Fairchild Semiconductor |
Asymmetric Dual N-Channel MOSFET |
|
| 4 | FDMS3660S |
ON Semiconductor |
Asymmetric Dual N-Channel MOSFET |
|
| 5 | FDMS3662 |
Fairchild Semiconductor |
MOSFET |
|