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FDMS3660S |
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| Part Number | FDMS3660S |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The co... |
| Features |
Q1: N−Channel
• Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel • Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing • These Devices are Pb−Free and are RoHS Compliant Applications • Computing • Communications • General Purpose Point of Load • Notebook VCORE www.onsemi.com Pin 1 G1 D1 D1 D1 D1 PHASE... |
| Document |
 FDMS3660S Data Sheet
PDF 702.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMS3660AS |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMS3660S |
Fairchild Semiconductor |
Asymmetric Dual N-Channel MOSFET |
|
| 3 | FDMS3662 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDMS3662 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMS3664S |
Fairchild Semiconductor |
MOSFET |
|