| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SK2312 loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ |
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Toshiba Semiconductor |
2SK2313 Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if th |
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Toshiba Semiconductor |
2SK2350 .9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operati |
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Toshiba Semiconductor |
Field Effect Transistor acteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 3.57 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VD |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if th |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 |
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Toshiba Semiconductor |
N-Channel MOSFET loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 |
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Panasonic Semiconductor |
Silicon N-Channel MOSFET V mS pF pF pF 1 Silicon Junction FETs (Small Signal) PD Ta 150 240 Ta=25˚C 125 200 200 VGS=0.4V 2SK2380 ID VDS 240 VDS=10V ID VGS Allowable power dissipation PD (mW) Drain current ID (µA) 100 160 Drain current ID (µA) 160 75 120 0 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor urrent VDS=500V; VGS= 0 2SK2386 MIN TYPE MAX UNIT 500 V 2.0 4.0 V 1.6 Ω ±100 nA 500 µA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herei |
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Toshiba Semiconductor |
2SK2313 Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if th |
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Potens semiconductor |
N-Channel MOSFETs 20V, 5.6A, RDS(ON) =26mΩ@VGS = 4.5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.8V Gate Drive Applications Applications Notebook Load Switch Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless |
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Panasonic Semiconductor |
2SK2375 q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a moto |
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Toshiba Semiconductor |
Field Effect Transistor eristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 6.25 125 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET igh temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the ab |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2328 Absolute Maximum Ratings (Ta = |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET .9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operati |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2373 Absolute Maximum Ratings (Ta = 25°C |
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Toshiba Semiconductor |
N-Channel MOSFET ly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tempe |
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Toshiba Semiconductor |
N-Channel MOSFET ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vo |
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