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K2399 |
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| Part Number | K2399 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK2399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2399 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ... |
| Features |
eristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
6.25 125
°C / W °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 11.6 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1 2002-07-22
Electrical Characteristics (Ta = 25°C)
2SK2399
Char... |
| Document |
 K2399 Data Sheet
PDF 266.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K2391 |
Toshiba Semiconductor |
Field Effect Transistor |
|
| 2 | K2394 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 3 | K2394 |
ON Semiconductor |
N-Channel JFET |
|
| 4 | K2395 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 5 | K2396 |
Renesas |
Silicon Power MOS FET |
|