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Features
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acteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
3.57 62.5
°C / W °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 840 µH, RG = 25 Ω, IAR = 20 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-02-06
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Drain ...
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K2391 Data Sheet
