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PDK2314 |
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| Part Number | PDK2314 |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
20V, 5.6A, RDS(ON) =26mΩ@VGS = 4.5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.8V Gate Drive Applications Applications Notebook Load Switch Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dis... |
| Document |
 PDK2314 Data Sheet
PDF 593.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PDK2612A |
Potens semiconductor |
N-Channel MOSFETs |
|
| 2 | PDK-P-M |
Advanced XTAL Products |
QUARTZ PRESSURE TRANSDUCER |
|
| 3 | PDK3612 |
Potens semiconductor |
N-Channel MOSFETs |
|
| 4 | PDK3908 |
Potens semiconductor |
N-Channel MOSFETs |
|
| 5 | PDK3912 |
Potens semiconductor |
N-Channel MOSFETs |
|