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2SK2373 |
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| Part Number | 2SK2373 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2373 Silicon N-Channel MOS FET ADE-208-268 1st. Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can b... |
| Features |
• • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2373 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. Marking is “ZE –”. Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 0.2 0.4 0.2 150 150 –55 to +1... |
| Document |
 2SK2373 Data Sheet
PDF 34.92KB |
| Distributor | Stock | Price | Buy |
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