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LRC |
Silicon Tuning Diode ess otherwise noted) Characteristic Reverse BreakdownVoltage (I R = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 300 0.1 — µAdc ppm/°C (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coe |
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LRC |
Silicon Pin Diode R –4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Diode Capacitance (VR = 20 Vdc) Series Resistance (IF = 10 mAdc, f =100MHz) Reverse Leakage Current (VR = 25 Vdc) Sy |
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LRC |
High Voltage Silicon Pin Diode Ambient Junction and Storage Temperature Value 200 20 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg *FR –4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Re |
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LRC |
Silicon Tuning Diode eristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 — — Typ — — 300 Max — 0.1 — Unit Vdc µAdc ppm/°C Ct, Diod |
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LRC |
Silicon Tuning Diode BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Symbol V(BR)R IR Min 20 — Typ — — Max — 50 Unit Vdc nAdc Ct, Diode Capacitance Q, Figure of Merit VR = 2.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 500 MHz Device Min Nom Max |
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LRC |
Silicon Tuning Diode Junction and Storage Temperature 1.57 635 150 mW/°C °C/W °C Value 30 200 Max 200 Unit Vdc mAdc Unit mW 2 ANODE THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol V(BR)R Min 30 Max — Unit Vdc MMVL105GT1 –1 |
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LRC |
Silicon Epicap Diode racteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 300 0.1 — µAdc ppm/°C (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) |
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LRC |
Silicon Tuning Diode ACTERISTICS RθJA TJ, Tstg *FR –4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — |
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