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MMVL109T1 |
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| Part Number | MMVL109T1 |
| Manufacturer | LRC |
| Description | www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode MMVL109T1 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mech... |
| Features |
racteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc
IR TCC
— —
— 300
0.1 —
µAdc ppm/°C
(VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz)
Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 50 MHz Device Min Nom Max Min MMVL109T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.
CR, Capacitance Ratio C3/C25 f = 1.0 MHz(Note 1) Min Max 5.0 6.5
MMVL109T1 –1/2 LESHAN RADIO COMPANY, LTD. MMVL109T1 TYPICAL CHA... |
| Document |
 MMVL109T1 Data Sheet
PDF 66.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMVL109T1 |
ON Semiconductor |
Silicon Epicap Diodes |
|
| 2 | MMVL105GT1 |
ON Semiconductor |
VOLTAGE VARIABLE CAPACITANCE DIODE |
|
| 3 | MMVL105GT1 |
LRC |
Silicon Tuning Diode |
|
| 4 | MMVL2101T1 |
LRC |
Silicon Tuning Diode |
|
| 5 | MMVL2101T1 |
ON Semiconductor |
Silicon Tuning Diode |
|