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MMVL105GT1 |
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| Part Number | MMVL105GT1 |
| Manufacturer | LRC |
| Description | www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL105GT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides... |
| Features |
Junction and Storage Temperature 1.57 635 150 mW/°C °C/W °C Value 30 200 Max 200 Unit Vdc mAdc Unit mW
2 ANODE
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol V(BR)R Min 30 Max — Unit Vdc
MMVL105GT1 –1/2 LESHAN RADIO COMPANY, LTD. MMVL105GT1 TYPICAL CHARACTERISTICS 20 18 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 f = 1.0 MHz TA = 25°C 1000 VR = 3 Vdc TA = 25°C 100 10 10 100 f, FREQUENCY (MHz) 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure... |
| Document |
 MMVL105GT1 Data Sheet
PDF 77.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMVL105GT1 |
ON Semiconductor |
VOLTAGE VARIABLE CAPACITANCE DIODE |
|
| 2 | MMVL109T1 |
LRC |
Silicon Epicap Diode |
|
| 3 | MMVL109T1 |
ON Semiconductor |
Silicon Epicap Diodes |
|
| 4 | MMVL2101T1 |
LRC |
Silicon Tuning Diode |
|
| 5 | MMVL2101T1 |
ON Semiconductor |
Silicon Tuning Diode |
|