| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor e definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-07 BFP193 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteris |
|
|
|
|
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor eter Symbol Value Unit Junction - soldering point2) RthJS 105 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon RF Transistor Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC |
|
|
|
|
Infineon Technologies AG |
NPN Silicon RF Transistor llector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon RF Transistor eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 1 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon RF Transistor otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = |
|
|
|
|
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
|
|
|
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-08 BFP183W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Valu |
|
|
|
|
Infineon Technologies AG |
NPN Silicon RF Transistor Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC |
|
|
|
|
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) K/W 1 2013-10-15 BFP181 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC |
|
|
|
|
Infineon Technologies AG |
NPN Silicon RF Transistor pecified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC curren |
|
|
|
|
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-07 BFP182R Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Charact |
|
|
|
|
Infineon Technologies AG |
NPN Silicon RF Transistor Jun-16-2003 BFP360W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Symbol min. Values typ. max. Unit Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO ICES ICBO IEBO hFE 6 60 9 130 |
|
|
|
|
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor V mA mW °C 1 2013-09-19 BFP405 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 530 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC |
|
|
|
|
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor r Junction - soldering point1) Symbol RthJS Value 4.5 4.1 15 15 1.5 25 3 75 150 -55 ... 150 Value 500 Unit V mA mW °C Unit K/W 1 2013-09-19 BFP405F Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values |
|
|
|
|
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
|
|
|
|
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor tor lead at the soldering point to the pcb Value 4.5 4.2 15 15 1.5 70 7 230 150 -65 ... 150 -65 ... 150 Unit V mA mW °C 2013-09-13 1 BFP460 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 250 Unit K/W Electrical |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor |
|
|
|
|
Infineon Technologies AG |
Surface mount high linearity silicon NPN RF bipolar transistor list • Minimum noise figure NFmin = 0.65 dB at 1.9 GHz, 3 V, 6 mA • High gain Gma = 24 dB at 1.9 GHz, 3 V, 25 mA • OIP3 = 26.5 dBm at 1.9 GHz, 3 V, 25 mA Product validation Qualified for industrial applications according to the relevant tests of JEDE |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
|