BFP183W Infineon Technologies AG Low Noise Silicon Bipolar RF Transistor Datasheet, en stock, prix

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BFP183W

Infineon Technologies AG
BFP183W
BFP183W BFP183W
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Part Number BFP183W
Manufacturer Infineon (https://www.infineon.com/) Technologies AG
Description Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and ...
Features the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-08 BFP183W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V, pulse measured V(BR)CEO 12 - -V ICES - - 100 µA ICBO - -...

Document Datasheet BFP183W Data Sheet
PDF 537.54KB
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