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BFP136 |
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| Part Number | BFP136 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFP136W NPN Silicon RF Transistor For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device... |
| Features |
Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 80 mA, VCE = 5 V hFE 50 100 200 IEBO 1 µA ICBO 50 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Jun-22-2001
BFP136W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 80 mA, VCE = 5 V, f = 500 MHz Colle... |
| Document |
 BFP136 Data Sheet
PDF 79.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFP136 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP136W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 3 | BFP136W |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 4 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise |
|
| 5 | BFP180 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|