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BFP181W |
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| Part Number | BFP181W |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFP 181W NPN Silicon RF Transistor For low noise, high-gain broadband amplifier at 3 4 collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostati... |
| Features |
eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Oct-12-1999
BFP 181W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Colle... |
| Document |
 BFP181W Data Sheet
PDF 118.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFP181 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP181 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFP181R |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 4 | BFP181R |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 5 | BFP181T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|