BFP196 Infineon Technologies AG Low Noise Silicon Bipolar RF Transistor Datasheet, en stock, prix

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BFP196

Infineon Technologies AG
BFP196
BFP196 BFP196
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Part Number BFP196
Manufacturer Infineon (https://www.infineon.com/) Technologies AG
Description Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power a...
Features eter Symbol Value Unit Junction - soldering point2) RthJS 105 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-04 BFP196 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 ...

Document Datasheet BFP196 Data Sheet
PDF 543.79KB
Distributor Stock Price Buy

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